WNM2029 single n-channel, 20v, 1.85a, power mosfet descriptions the WNM2029 is n-channel enhancement mos field effect transistor. uses advanced trench technology and desig n to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WNM2029 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-323 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-323 pin configuration (top view) 29* 29 = device code * = month (a~z) marking order information device package shipping WNM2029-3/tr sot-323 3000/reel&tape v ds (v) rds(on) (
)i d (a) 0.072@ v gs =4.5v 1.8 0.088@ v gs =2.5v 1.5 20 0.115@ v gs =1.8v 1.0 d 3 12 s g 3 2 1 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs 12 v t a =25c 1.85 1.69 continuous drain current a t a =70c i d 1.48 1.35 a t a =25c 0.36 0.3 maximum power dissipation a t a =70c p d 0.23 0.19 w t a =25c 1.65 1.51 continuous drain current b t a =70c i d 1.32 1.21 a t a =25c 0.28 0.24 maximum power dissipation b t a =70c p d 0.18 0.15 w pulsed drain current c i dm 8a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 290 345 junction-to-ambient thermal resistance a steady state r ja 335 415 t ? 10 s 380 435 junction-to-ambient thermal resistance b steady state r ja 450 520 junction-to-case thermal resistance steady state r jc 270 310 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. WNM2029 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 20.5 v zero gate voltage drain current i dss v ds =16 v, v gs = 0v 100 na gate-to-source leakage current i gss v ds = 0 v, v gs = 12v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.50 0.65 0.80 v vgs = 4.5v, id = 1.8a 72 87 vgs = 2.5v, id = 1.5a 88 105 drain-to-source on-resistance r ds(on) vgs = 1.8v, id = 1.0a 115 138 m ? forward transconductance g fs vds = 5 v, id = 1.8a 6 s charges, capacitances and gate resistance input capacitance c iss 185 output capacitance c oss 58 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 54 pf total gate charge q g(tot) 4.1 threshold gate charge q g(th) 0.2 gate-to-source charge q gs 0.6 gate-to-drain charge q gd v gs = 4.5 v, v ds = 10 v, i d =1.8a 1.25 nc switching characteristics turn-on delay time td(on) 9.0 rise time tr 14.0 turn-off delay time td(off) 25.0 fall time tf v gs = 4.5 v, v ds = 6 v, r l =3 ? , r g =6 ? 9.0 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 1.0a 0.5 0.7 1.0 v WNM2029 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics on-resistance vs. drain current on-resistance vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 2 4 6 8 v ds = 5v t=125 o c 012345 0 2 4 6 8 vgs=2.5 ~ 4.5v vgs=2.0v vgs=1.5v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) vgs=1.0v transfer characteristics on-resistance vs. gate-to-source voltage threshold voltage vs. temperature -50 -25 0 25 50 75 100 125 150 50 60 70 80 90 100 v gs =4.5v,id=1.8a r ds(on) - on-resistance (m : ) temperature( o c) 02468 20 40 60 80 100 120 140 v gs =4.5v v gs =2.5v r ds(on) - on-resistance(m : ) i ds -drain-to-source current(a) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 40 60 80 100 120 140 i ds =1.8a t=25 o c t=-50 o c i ds -drain to source current(a) v gs -gate-to-source voltage(v) r ds(on) - on-resistance (m : ) v gs -gate-to-source voltage(v) -50 -25 0 25 50 75 100 125 150 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ids=250ua v gs(th) gate threshold voltage (v) temperature ( o c) WNM2029 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
capacitance single pulse power body diode forward voltage safe operating power transient thermal response (junction-to-ambient) 0.3 0.3 0.6 0.9 1.2 1.5 0.4 0.5 0.6 0.7 0.8 0.9 t=25 o c t=150 o c i sd -source to drain current(a) v sd -source-to-drain voltage(v) 0246810 0 40 80 120 160 200 240 280 v gs =0v f=1mhz ciss coss crss c - capacitance(pf) v ds drain-to-source voltage (v) C drain current (a) i d 1 ms t a = 25 c single pulse 10 ms 100 ms dc v ds C drain-to-source voltage (v) 1 s 10 s 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 bv dss limited *limited by r ds(on) C drain current (a) i d 1 ms t a = 25 c single pulse 10 ms 100 ms dc v ds C drain-to-source voltage (v) 1 s 10 s 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 bv dss limited *limited by r ds(on) C drain current (a) i d 1 ms t a = 25 c single pulse 10 ms 100 ms dc v ds C drain-to-source voltage (v) 1 s 10 s 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 bv dss limited *limited by r ds(on) 10 C3 10 C2 1 10 600 10 C1 10 C4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 415 c/w 3. t jm C t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0 12 20 4 8 power (w) time (sec) 16 1 100 600 10 10 C1 10 C3 10 C2 t a = 25 c WNM2029 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-323 dimensions in millimeter symbol min. typ. max. a 0.900 1.000 1.100 a1 0.000 0.050 0.100 a2 0.900 0.950 1.000 b 0.200 0.300 0.400 c 0.080 0.115 0.150 d 2.000 2.100 2.200 e 1.150 1.250 1.350 e1 2.150 2.300 2.450 e 0.650typ e1 1.200 1.300 1.400 l 0.525ref l1 0.260 0.460 ? 0 e 8 e WNM2029 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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